document number: 93172 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 13-jan-10 1 igbt fourpack module, 75 a GB75YF120UT vishay high power products features ? square rbsoa ?hexfred ? low q rr , low switching energy ?positive v ce(on) temperature coefficient ? copper baseplate ? low stray inductance design ? speed 8 khz to 60 khz ? compliant to rohs directive 2002/95/ec benefits ? benchmark efficiency for sm ps appreciation in particular hf welding ? rugged transient performance ? low emi, requires less snubbing ? direct mounting to heatsink space saving ? pcb solderable terminals ? low junction to case thermal resistance product summary v ces 1200 v i c at t c = 67 c 75 a v ce(on) (typical) 3.4 v econo2 4pack absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 1200 v continuous coll ector current i c t c = 25 c 100 a t c = 80 c 67 pulsed collector current see fig. c.t.5 i cm 200 clamped inductive load current i lm 200 diode continuous forward current i f t c = 25 c 60 t c = 80 c 40 diode maximum forward current i fm 150 gate to emitter voltage v ge 20 v maximum power dissipation (igbt) p d t c = 25 c 480 w t c = 80 c 270 maximum operating junction temperature t j 150 c storage temperature range t stg - 40 to + 125 isolation voltage v isol ac 2500 (min) v
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93172 2 revision: 13-jan-10 GB75YF120UT vishay high power products igbt fourpack module, 75 a note (1) energy losses include tail and diode reverse recovery electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitte r breakdown voltage v br(ces) v ge = 0 v, i c = 500 a 1200 - - v collector to em itter voltage v ce(on) i c = 75 a, v ge = 15 v - 3.4 4.0 i c = 100 a, v ge = 15 v - 3.8 4.5 i c = 75 a, v ge = 15 v, t j = 125 c - 4.0 4.5 i c = 100 a, v ge = 15 v, t j = 125 c - 4.53 5.1 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 4.0 5.0 6.0 threshold voltage temperature coefficient v ge(th) / t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 11 - mv/c zero gate voltage collector current i ces v ge = 0 v, v ce = 1200 v - 7 250 a v ge = 0 v, v ce = 1200 v, t j = 125 c - 580 2000 diode forward voltage drop v fm i f = 75 a - 3.7 4.9 v i f = 100 a - 4.1 5.5 i f = 75 a, t j = 125 c - 3.7 5.1 i f = 100 a, t j = 125 c - 4.2 5.7 gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t = 25 c unless otherwise noted) parameter symbol test condi tions min. typ. max. units total gate charge (turn-on) q g i c = 75 a v cc = 600 v v ge = 15 v - 630 - nc gate to emitter charge (turn-on) q ge -65- gate to collector charge (turn-on) q gc - 250 - turn-on switching loss e on i c = 75 a, v cc = 600 v v ge = 15 v, r g = 5 , l = 500 h t j = 25 c (1) -1.74- mj turn-off switching loss e off -1.46- total switching loss e tot -3.20- turn-on switching loss e on i c = 75 a, v cc = 600 v v ge = 15 v, r g = 5 , l = 500 h t j = 125 c (1) -2.44- turn-off switching loss e off -2.35- total switching loss e tot -4.79- turn-on delay time t d(on) i c = 75 a, v cc = 600 v v ge = 15 v, r g = 5 , l = 500 h t j = 125 c - 268 - ns rise time t r -43- turn-off delay time t d(off) - 308 - fall time t f - 127 - reverse bias safe operating area rbsoa t j = 150 c, i c = 200 a r g = 10 , v ge = 15 v to 0 v fullsquare short circuit safe operating area scsoa t j = 150 c v cc = 900 v, v p = 1200 v r g = 10 , v ge = 15 v to 0 v 10 - - s diode peak reverse recovery current i rr t j = 25 c v cc = 200 v i f = 50 a di/dt = 10 a/s -1318 a t j = 125 c - 19 23 diode reverse recovery time t rr t j = 25 c - 132 189 ns t j = 125 c - 200 270 total reverse recovery charge q rr t j = 25 c - 858 1700 nc t j = 125 c - 1900 3105
document number: 93172 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 13-jan-10 3 GB75YF120UT igbt fourpack module, 75 a vishay high power products fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25 c; t j 150 c fig. 4 - reverse bias soa t j = 150 c; v ge = 15 v thermistor electrical specifications (t = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units resistance r 25 4538 5000 5495 t j = 100 c 468.6 493.3 518 b value b t j = 25 c/50 c 3307 3375 3443 k thermal and mechanical specifications parameter symbol min. typ. max. units junction to case igbt r thjc (igbt) - - 0.26 c/w junction to case diode r thjc (diode) - - 0.56 case to sink, flat, greased surface r thcs (module) - 0.02 - mounting torque (m5) 2.7 - 3.3 nm weight - 170 - g 0 20406080100120 0 20 40 60 80 100 120 140 160 i c (a) t c (c) 0 20406080100120140160 0 100 200 300 400 500 t c (c) p d (w) 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 v ce (v) ic (a) 10 100 1000 10000 1 10 100 1000 v ce (v) i c (a)
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93172 4 revision: 13-jan-10 GB75YF120UT vishay high power products igbt fourpack module, 75 a fig. 5 - typical igbt output characteristics t j = 25 c; t p = 500 s fig. 6 - typical igbt output characteristics t j = 125 c; t p = 500 s fig. 7 - typical diode forward characteristics t p = 500 s fig. 8 - typical v ce vs. v ge t j = 25 c fig. 9 - typical v ce vs. v ge t j = 125 c fig. 10 - typical transfer characteristics v ce = 20 v; t p = 500 s 0123456 0 20 40 60 80 100 120 140 160 vge = 18v vge = 15v vge = 12v vge = 9v v ce (v) i ce (a) 012345678 0 20 40 60 80 100 120 140 160 vge = 18v vge = 15v vge = 12v vge = 9v v ce (v) i ce (a) 0.0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 tj = 25c tj = 125c v f (v) i f (a) 7 9 11 13 15 17 19 0 2 4 6 8 10 12 14 16 18 20 i ce = 75a i ce = 50a i ce = 25a v ge (v) v ce (v) 7 9 11 13 15 17 19 0 2 4 6 8 10 12 14 16 18 20 i ce = 75a i ce = 50a i ce = 25a v ge (v) v ce (v) 56789101112 0 50 100 150 200 250 300 t j = 25c t j = 125c v ge (v) i ce (a)
document number: 93172 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 13-jan-10 5 GB75YF120UT igbt fourpack module, 75 a vishay high power products fig. 11 - typical zero gate voltage collector current fig. 12 - typical threshold voltage fig. 13 - typical energy loss vs. i c t j = 125 c; l = 500 h; v cc = 600 v, r g = 5 ; v ge = 15 v fig. 14 - typical switching time vs. i c t j = 125 c; l = 500 h; v cc = 600 v, r g = 5 ; v ge = 15 v fig. 15 - typical energy loss vs. r g t j = 125 c; l = 500 h; v cc = 600 v, i c = 75 a; v ge = 15 v fig. 16 - typical switching time vs. r g t j = 125 c; l = 500 h; v cc = 600 v, i c = 75 a; v ge = 15 v 400 600 800 1000 1200 0.001 0.01 0.1 1 t j = 125c t j = 25c v ces (v) i ces (ma) 0 0.2 0.4 0.6 0.8 1 2 2.5 3 3.5 4 4.5 5 5.5 t j = 125c t j = 25c i c (ma) v geth (v) 30 40 50 60 70 80 1000 1500 2000 2500 e on e off i c (a) energy (j) 20 30 40 50 60 70 80 10 100 1000 t r td off t f td on i c (a) switching time (ns) r g ( ) energy ( j) 0 1020304050 0 2000 4000 6000 8000 10000 12000 14000 e on e off 0 10 20 30 40 5 0 10 100 1000 10000 t r td off t f td on r g ( ) switching time (ns)
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93172 6 revision: 13-jan-10 GB75YF120UT vishay high power products igbt fourpack module, 75 a fig. 17 - typical diode i rr vs. i f t j = 125 c fig. 18 - typical diode i rr vs. di f /dt v cc = 600 v; i f = 75 a fig. 19 - typical diode i rr vs. r g t j = 125 c; i f = 75 a fig. 20 - typical gate charge vs. v ge i ce = 5.0 a; l = 600 h fig. 21 - maximum transient thermal impedance, junction to case (igbt) 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0 20 40 60 80 100 120 5 ohm 47 ohm 27 ohm i f (a) i rr (a) 400 800 1200 1600 2000 0 20 40 60 80 100 di f / dt (a/ s) i rr (a) 0 10 20 30 40 5 0 0 20 40 60 80 100 r g ( ) i rr (a) q g , total gate charge (nc) v ge (v) 0 100 200 300 400 500 600 700 0 2 4 6 8 10 12 14 16 typical value 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 1e-005 0.0001 0.001 0.01 0.1 1 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response ) t 1 , rectangular pulse duration (sec) thermal response (z thjc )
document number: 93172 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 13-jan-10 7 GB75YF120UT igbt fourpack module, 75 a vishay high power products fig. c.t.1 - gate ch arge circuit (turn-off) fig. c.t.2 - rbsoa circuit fig. c.t.3 - s.c. soa circuit fig. c.t.4 - switching loss circuit fig. c.t.5 - resistive load circuit 1k v cc d.u.t. 0 l + - l 80 v r g 1000 v d.u.t. + - driver d.u.t. 900 v d c + - l diode clamp/ d.u.t. d.u.t./ driver - 5 v + - r g v cc + - r g d.u.t. r = v cc i cm v cc + -
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93172 8 revision: 13-jan-10 GB75YF120UT vishay high power products igbt fourpack module, 75 a ordering information table circuit configuration 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 3 - current rating (75 = 75 a) 4 - circuit configuration (y = fourpack) 5 - package indicator (f = econo2) 6 - voltage rating (120 = 1200 v) 7 - speed/type (u = ultrafast igbt) 8 - t = thermistor device code 5 13 24 678 g b 75 y f 120 u t 41 43 5 6 7 37 38 28 29 32 33 23 24 21 22 46 47 48 49 15 16 17 e2 c2 c/e2 qb3 qb4 e1 c1 g2 aux2 g1 aux1 g4 aux4 g3 aux3 c/e1 qb1 qb2 rt1 10 12 links to related documents dimensions www.vishay.com/doc?95252
document number: 95252 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 29-nov-07 1 econo2 4pak outline dimensions vishay semiconductors dimensions in millimeters (inches) z y 20.5 + 1.0 - 0.5 105 0.1 13.2 0.15 0.8 1.25 - 0.02 - 0.06 0.8 0.03 x 2:1 34.29 30.48 22.86 19.05 30.48 22.86 19.05 34.29 30.48 22.86 19.05 26.67 39.49 93 0.15 107.8 0.2 22.86 19.05 26.67 34.29 39.49 15.24 21 0.03 21 0.03 5.5 0.05 10.5 45.4 0.2 42 0.15 7.5 0 - 0 3 11.43 detail r 3 10.5 83 0 - 0.2 z 2:1 0.6 0.5 0.8 0.03 y 2:1 0.85 1 1.25 - 0.02 - 0.06 2 49 4 5 6 7 810 12 15 16 17 19 48 47 46 44 43 41 40 38 37 36 35 33 32 30 2928 27 26 24 23 22 21 11.43 7.62 7.62 11.43 11.43 7.62 7.62 3.81 7.62 7.62 11.43
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